Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels

ABSTRACT

An image sensor includes multiple output channels, a non-destructive charge sensing output channel having an associated gain value of G 1  and a charge multiplying output channel having an associated gain value G 3 . The image sensor can also include a charge bypass output channel having an associated gain value G 2 . For each charge packet, a pixel signal produced by either the charge sensing output channel, the charge multiplying output channel or the charge bypass output channel is selected. If the pixel signal produced by the charge sensing output channel is selected, a gain factor (G 3 /G 1 ) is applied to each pixel signal selected from the charge bypass output channel. If the pixel signal produced by the charge bypass output channel is selected, a gain factor (G 3 /G 2 ) is applied to each pixel signal selected from the charge bypass output channel. The pixel signals are combined to produce an image.

TECHNICAL FIELD

The present invention relates to image sensors for use in digitalcameras and other types of image capture devices, and more particularlyto Charge Coupled Device (CCD) image sensors. Still more particularly,the present invention relates to a method of producing an image withpixel signals produced by a CCD image sensor having multiple outputchannels.

BACKGROUND

FIG. 1 depicts a simplified block diagram of a first CCD image sensorthat performs charge multiplication in accordance with the prior art.Pixel array 100 includes vertical charge-coupled device (CCD) shiftregisters (not shown) that shift charge packets from a row of pixels 102one row at a time into low voltage horizontal CCD (HCCD) shift register105. Low voltage HCCD shift register 105 serially shifts the chargepackets into a high voltage charge multiplying HCCD shift register 110.Charge multiplication occurs in charge multiplying HCCD shift register110 through the application of large electric fields to the gateelectrodes (not shown) overlying HCCD shift register 110 during chargetransfer. The large electric fields produce a signal larger thanoriginally collected in the pixels in pixel array 100. The largeelectric fields are created by overdriving the gate electrodes over theextended HCCD shift register 110 with sufficiently larger voltages.Typically, charge multiplying HCCD shift register 110 can multiply thenumber of charge carriers in each charge packet by a factor of two toone thousand. The multiplied charge packet output at the end of chargemultiplying HCCD shift register 110 is sensed and converted into avoltage signal by output amplifier 120.

A conventional output amplifier can have a minimum noise level of eightcharge carriers, meaning the output amplifier is unable to detect asignal when a charge packet contains less than eight charge carriers.One advantage of a multiplying HCCD shift register 110 is the ability toamplify or multiple charge packets that would not normally be detectedby an output amplifier. For example, a charge multiplying HCCD shiftregister can take an input of just one undetectable charge carrier(e.g., electron) and convert it to a larger detectable group of onethousand charge carriers. The output amplifier is now able to detect thecharge packet and convert the charge packet to a voltage signal.

One drawback to a charge multiplying HCCD shift register is its dynamicrange. If the charge packet entering the multiplying HCCD shift registerhas two hundred charge carriers and if the gain is one thousand, the twohundred charge carriers are multiplied to 200,000 charge carriers. Manycharge multiplying HCCD shift registers are unable to hold 200,000 ormore charge carriers, and the charge carriers bloom (spread out) intothe pixels adjacent to the HCCD shift register. When the capacity of thecharge multiplying HCCD shift register is 200,000 charge carriers andthe gain is one thousand, the maximum signal that can be measured by acharge multiplying HCCD shift register is 200 charge carriers with anoise floor of one charge carrier. That is a dynamic range of 200 to 1.To illustrate how poor that dynamic range is, an output amplifier with aminimum noise level of eight electrons can easily measure charge packetscontaining 32,000 charge carriers for a dynamic range of 4000 to 1.

To overcome this limitation, prior art CCD image sensors (see FIG. 2)have added a second output amplifier 200 to HCCD shift register 105. Ifthe image is known to contain charge packets too large for the chargemultiplying HCCD shift register 110, the charge packets are seriallyshifted through HCCD shift register 105 to output amplifier 200 insteadof towards the charge multiplying HCCD shift register 110. Onedisadvantage to this implementation is the entire image must be read outof either output amplifier 200 or output amplifier 120. If an imagecontains both bright and dark regions, the image must be read out ofoutput amplifier 200 so the bright regions do not bloom (flood) thecharge multiplying HCCD shift register 110. But when the entire image isread out of output amplifier 200, dark regions in the image are notshifted through the charge multiplying HCCD shift register and do notreceive the benefit of charge multiplying HCCD shift register 110.

SUMMARY

An image sensor includes a horizontal shift register electricallyconnected to a pixel array for receiving charge packets from the pixelarray. A non-destructive sense node is connected to an output of thehorizontal shift register. A charge directing switch is electricallyconnected to the non-destructive sense node. The charge directing switchincludes two outputs. A charge multiplying horizontal shift register iselectrically connected to one output of the charge directing switch. Abypass horizontal shift register or an amplifier can be connected to theother output of the charge directing switch.

A pipeline delay horizontal shift register can be connected between thenon-destructive sense node and the charge directing switch. An extendedhorizontal shift register can be connected between the charge directingswitch and the input of the charge multiplying horizontal shiftregister. Amplifiers can be connected to the non-destructive sense node,the output of the bypass horizontal shift register, and the output ofthe charge multiplying shift register.

The image sensor can be included in an image capture device. The imagecapture device can include correlated double sampling (CDS) unitsconnected to the outputs of the amplifiers. The CDS units can eachinclude an analog-to-digital converter. A computing device receives adigital pixel signal produced by the non-destructive sense node for eachcharge packet output from the horizontal shift register. The computingdevice produces a switch signal that is received by the charge directingswitch and causes the charge directing switch to direct a charge packetto the charge multiplying horizontal shift register when the number ofcharge carriers in the charge packet will not saturate the chargemultiplying horizontal shift register. The charge directing switchdirects a charge packet to the bypass horizontal shift register oramplifier connected to the other output of the charge directing switchwhen the charge packet will saturate the charge multiplying horizontalshift register.

The amplifier connected to the non-destructive sense node and the CDSunit connected to the amplifier combined form a charge sensing outputchannel having a combined charge to voltage conversion gain value G1.The amplifier electrically connected to one output of the chargedirecting switch and the CDS unit connected to the amplifier combinedform a charge bypass output channel having a combined charge to voltageconversion gain value G2. The amplifier connected to the output of thecharge multiplying horizontal shift register and the CDS unit connectedto the amplifier combined form a charge multiplying output channelhaving a combined charge to voltage conversion gain value G3. A methodfor producing an image includes selecting a pixel signal produced byeither the charge sensing output channel, the charge multiplying outputchannel or the charge bypass output channel. If the pixel signalproduced by the charge sensing output channel is selected, applying again factor (G3/G1) to each pixel signal selected from the charge bypassoutput channel. If the pixel signal produced by the charge bypass outputchannel is selected, applying a gain factor (G3/G2) to each pixel signalselected from the charge bypass output channel. The image is produced bycombining the selected pixel signals.

A method for producing an image sensor includes providing a horizontalshift register electrically connected to a pixel array for receivingcharge packets from the pixel array. A non-destructive sense node isprovided that is connected to an output of the horizontal shiftregister. A charge directing switch is provided that is electricallyconnected to the non-destructive sense node. The charge directing switchincludes first and second outputs. A charge multiplying horizontal shiftregister is provided that is electrically connected to the first outputof the charge directing switch. A bypass horizontal shift register or anamplifier is provided that is connected to the second output of thecharge directing switch. A method for producing an image capture devicefurther includes providing a computing device that is electricallyconnected to the charge directing switch, where the computing device isoperable to transmit a switch signal to the charge directing switch inresponse to a signal received from the non-destructive sense node.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention are better understood with reference to thefollowing drawings. The elements of the drawings are not necessarily toscale relative to each other.

FIG. 1 depicts a simplified block diagram of a first CCD image sensorthat performs charge multiplication in accordance with the prior art;

FIG. 2 depicts a simplified block diagram of a second CCD image sensorthat performs charge multiplication in accordance with the prior art;

FIG. 3 is a simplified block diagram of an image capture device in anembodiment in accordance with the invention;

FIG. 4 is a simplified block diagram of a first CCD image sensorsuitable for use as image sensor 306 shown in FIG. 3 in an embodiment inaccordance with the invention;

FIG. 5 is a simplified block diagram of a second CCD image sensorsuitable for use as image sensor 306 shown in FIG. 3 in an embodiment inaccordance with the invention;

FIG. 6 depicts a simplified top view of charge directing switch 414shown in FIG. 4 in an embodiment in accordance with the invention;

FIG. 7 depicts an exemplary timing diagram for charge directing switch414 shown in FIGS. 4 and 5;

FIG. 8 illustrates an exemplary timing diagram for charge directingswitch 414 shown in FIGS. 4 and 5;

FIG. 9 is a flowchart of a method for operating an image sensor in anembodiment in accordance with the invention;

FIG. 10 is a flowchart of a method for producing an image that can beused with the embodiment shown in FIGS. 4 and 5;

FIG. 11 is an exemplary diagram that is used to illustrate how thesignals output from the three output channels are combined to produce animage in an embodiment in accordance with the invention; and

FIG. 12 is a flowchart of a method for producing an image sensor in anembodiment in accordance with the invention.

DETAILED DESCRIPTION

Throughout the specification and claims, the following terms take themeanings explicitly associated herein, unless the context clearlydictates otherwise. The meaning of “a,” “an,” and “the” includes pluralreference, the meaning of “in” includes “in” and “on.” The term“connected” means either a direct electrical connection between theitems connected, or an indirect connection through one or more passiveor active intermediary devices. The term “circuit” means either a singlecomponent or a multiplicity of components, either active or passive,that are connected together to provide a desired function. The term“signal” means at least one current, voltage, charge, or data signal.

Additionally, the term “substrate” is to be understood as asemiconductor-based material including, but not limited to, silicon,silicon-on-insulator (SOI) technology, silicon-on-sapphire (SOS)technology, doped and undoped semiconductors, epitaxial layers or wellregions formed on a semiconductor substrate, and other semiconductorstructures.

Referring to the drawings, like numbers indicate like parts throughoutthe views.

FIG. 3 is a simplified block diagram of an image capture device in anembodiment in accordance with the invention. Image capture device 300 isimplemented as a digital camera in FIG. 3. Those skilled in the art willrecognize that a digital camera is only one example of an image capturedevice that can utilize an image sensor incorporating the presentinvention. Other types of image capture devices, such as, for example,cell phone cameras and digital video camcorders, can be used with thepresent invention.

In digital camera 300, light 302 from a subject scene is input to animaging stage 304. Imaging stage 304 can include conventional elementssuch as a lens, a neutral density filter, an iris and a shutter. Light302 is focused by imaging stage 304 to form an image on image sensor306. Image sensor 306 captures one or more images by converting theincident light into electrical signals. Digital camera 300 furtherincludes processor 308, memory 310, display 312, and one or moreadditional input/output (I/O) elements 314. Although shown as separateelements in the embodiment of FIG. 3, imaging stage 304 may beintegrated with image sensor 306, and possibly one or more additionalelements of digital camera 300, to form a compact camera module.

Processor 308 may be implemented, for example, as a microprocessor, acentral processing unit (CPU), an application-specific integratedcircuit (ASIC), a digital signal processor (DSP), or other processingdevice, or combinations of multiple such devices. Various elements ofimaging stage 304 and image sensor 306 may be controlled by timingsignals or other signals supplied from processor 308.

Memory 310 may be configured as any type of memory, such as, forexample, random access memory (RAM), read-only memory (ROM), Flashmemory, disk-based memory, removable memory, or other types of storageelements, in any combination. A given image captured by image sensor 306may be stored by processor 308 in memory 310 and presented on display312. Display 312 is typically an active matrix color liquid crystaldisplay (LCD), although other types of displays may be used. Theadditional I/O elements 314 may include, for example, various on-screencontrols, buttons or other user interfaces, network interfaces, ormemory card interfaces.

It is to be appreciated that the digital camera shown in FIG. 3 maycomprise additional or alternative elements of a type known to thoseskilled in the art. Elements not specifically shown or described hereinmay be selected from those known in the art. As noted previously, thepresent invention may be implemented in a wide variety of image capturedevices. Also, certain aspects of the embodiments described herein maybe implemented at least in part in the form of software executed by oneor more processing elements of an image capture device. Such softwarecan be implemented in a straightforward manner given the teachingsprovided herein, as will be appreciated by those skilled in the art.

Referring now to FIG. 4, there is shown a simplified block diagram of afirst CCD image sensor suitable for use as image sensor 306 shown inFIG. 3 in an embodiment in accordance with the invention. Image sensor400 can be implemented as any type of CCD image sensor, including, butnot limited to, an interline CCD image sensor and full frame imagesensor.

Image sensor 400 includes pixel array 402 having vertical shiftregisters (not shown) that shift charge packets from each row of pixelsinto horizontal shift register 404. Horizontal shift register 404 isimplemented as a low voltage horizontal charge-coupled device (CCD)shift register in an embodiment in accordance with the invention.Horizontal shift register 404 serial shifts each charge packet towardsnon-destructive sense node 406. Non-destructive sense node 406 isimplemented as a non-destructive floating gate sense node in anembodiment in accordance with the invention.

The voltage on non-destructive sense node 406 is input into amplifier408. The output of output amplifier 408 is connected to output circuit410. Output amplifier 408 and output circuit 410 together form a “chargesensing output channel”. Output circuit 410 is implemented as acorrelated double sampling (CDS) unit in an embodiment in accordancewith the invention. The CDS unit can be configured in any one of variouscircuit implementations. By way of example only, a CDS unit can beconfigured to subtract the double samples (e.g., reset and imagesamples) in the analog domain and pass the result to ananalog-to-digital converter. As another example, a CDS unit that isavailable from Analog Devices, part number AD9824, can be used for a CDSunit. The CDS unit may also be configured to digitally convert bothsamples and subtract the double samples in the digital domain as in U.S.Pat. No. 5,086,344.

Typically, an output circuit that includes an analog-to-digitalconverter has a pipeline processing delay. When the output circuitreceives an analog pixel signal that is output from output amplifier408, the corresponding digital pixel signal is not output from outputcircuit 410 until a given number of clock cycles have passed. A pipelinedelay horizontal shift register is used in some embodiments inaccordance with the invention to compensate for the pipeline processingdelay of output circuit 410. In the illustrated embodiment, pipelinedelay horizontal shift register 412 has a length that corresponds to thepipeline processing delay of output circuit 410. The length of pipelinedelay horizontal shift register 412 is determined so that a chargepacket that is sensed by non-destructive sense node 406 and passed topipeline delay horizontal shift register 412 is output from pipelinedelay horizontal shift register 412 and arrives at charge directingswitch 414 at substantially the same time or later as the digitizedpixel signal is output from CDS unit 410. Pipeline delay horizontalshift register 412 can have different lengths or not be used in otherembodiments in accordance with the invention.

A computing device (e.g., processor 308 in FIG. 3) analyzes the digitalpixel signal output from output circuit 410 and transmits a switchsignal on signal line 413 to charge directing switch 414. The computingdevice is constructed external to the image sensor die or chip in anembodiment in accordance with the invention. The computing device can beconstructed on the image sensor die or chip in another embodiment inaccordance with the invention.

If the digital pixel signal output from output circuit 410 represents asmall amount or number of charge carriers, the switch signal on signalline 413 causes charge directing switch 414 to pass the charge packetonto charge multiplication horizontal shift register 416. The chargepacket is then shifted through charge multiplying horizontal shiftregister 416 and input into output amplifier 418. Output amplifier 418outputs an analog pixel signal representing the amount of chargecarriers in the charge packet.

Output circuit 420 is connected to an output of output amplifier 418.Output amplifier 418 and output circuit 420 together form a “chargemultiplying output channel”. Output circuit 420 converts the analogpixel signal into a digital pixel signal. Output circuit 420 can performadditional processing of the pixel signal in some embodiments inaccordance with the invention. Output circuit 420 is implemented as aCDS unit in an embodiment in accordance with the invention. The CDS unitcan be configured in any one of multiple implementations.

If the digital pixel signal output from output circuit 410 represents anumber of charge carriers that can saturate multiplying horizontal shiftregister 416, the switch signal on signal line 413 causes chargedirecting switch 414 to direct the charge packet to non-chargemultiplying bypass horizontal shift register 422. The charge packet isthen shifted through bypass horizontal shift register 422 and input intooutput amplifier 424. Output amplifier 424 outputs an analog voltagesignal representing the amount of charge carriers in the charge packet.

Output circuit 426 is connected to an output of output amplifier 424.Output amplifier 424 and output circuit 426 together form a “chargebypass output channel”. Output circuit 426 converts the analog pixelsignal into a digital pixel signal. Output circuit 426 can performadditional processing of the pixel signal in some embodiments inaccordance with the invention. Output circuit 426 is implemented as aCDS unit in an embodiment in accordance with the invention. The CDS unitcan be configured in any one of multiple implementations.

Extended horizontal shift register 428 serves as a connecting horizontalshift register between charge directing switch 414 and chargemultiplying horizontal shift register 416. Extended horizontal shiftregister 428 operates at low voltage levels in an embodiment inaccordance with the invention. Extended horizontal shift register 428can be omitted in other embodiments in accordance with the invention.

Image sensor 400 produces two pixel signals for each charge packet readout of pixel array 402. One pixel signal is produced by the chargesensing output channel for each charge packet. When the charge packet isdirected to the charge bypass output channel, the second pixel signal isproduced by the charge bypass output channel. When the charge packet isdirected to the charge multiplying output channel, the second pixelsignal is produced by the charge multiplying output channel.

The lengths of bypass horizontal shift register and charge multiplyinghorizontal shift register are designed and implemented such that acharge packet arrives at the output amplifier 424 or the outputamplifier 418 on the same horizontal clock cycle in an embodiment inaccordance with the invention. The computing device constructs the finalimage by taking the output of output amplifier 424 or of outputamplifier 418 based on how the computing device directs each chargepacket at the charge directing switch.

Bypass horizontal shift register can be longer or shorter than chargemultiplying horizontal shift register in other embodiments in accordancewith the invention. In these embodiments, the digital pixel signalsoutput from output circuits 426 and 420 can be synchronized orre-ordered by the computing device (e.g., processor 308 in FIG. 3). Thecomputing device can store the state of the switch signal for eachcharge packet and use that data to re-order the digital pixels signalsto reproduce the image.

Output circuits 410, 420, 426 are constructed external to the imagesensor die or chip in an embodiment in accordance with the invention.Some or all of the components in output circuit 410, output circuit 420,or output circuit 426 can be constructed on the image sensor die or chipin other embodiments in accordance with the invention.

FIG. 5 is a simplified block diagram of a second CCD image sensorsuitable for use as image sensor 306 shown in FIG. 3 in an embodiment inaccordance with the invention. Image sensor 500 includes many of thesame elements as image sensor 400 shown in FIG. 4, with the exception ofbypass horizontal shift register 422. Bypass horizontal shift register422 is omitted from image sensor 500 and the input to amplifier 424 isconnected to charge directing switch 414.

One advantage to the FIG. 5 embodiment is that power is no longer neededto operate the bypass horizontal shift register. Power consumption isreduced in the image sensor 500 compared to image sensor 400 shown inFIG. 4.

Referring now to FIG. 6, there is shown a simplified top view of chargedirecting switch 414 shown in FIG. 4 in an embodiment in accordance withthe invention. Pipeline delay horizontal shift register 412, bypasshorizontal shift register 422, and extended horizontal shift register428 are shown connected to charge directing switch 414. Charge directingswitch 414 includes gates 600, 602, 604 that are disposed over chargeshift elements in an embodiment in accordance. Charge directing switch414 includes two outputs, one output is associated with gate 602 and theother output is associated with gate 604.

Pipeline delay horizontal shift register 412, bypass horizontal shiftregister 422, and extended horizontal shift register 428 are eachdepicted as two phase CCD shift registers in the illustrated embodiment.Other embodiments in accordance with the invention are not limited totwo phase CCD shift registers. CCD shift registers having three or morephases can be implemented in other embodiments.

The exemplary timing diagram illustrated in FIG. 7 is used to directcharge from pipeline delay horizontal shift register 412 to bypasshorizontal shift register 422 in an embodiment in accordance with theinvention. In embodiments that omit pipeline delay horizontal shiftregister 412, the timing diagram can be used to direct charge fromnon-destructive sense node 406 to bypass horizontal shift register 422.When gate 600 is clocked to a given level (e.g., a low level) at timeT₀, the signal on gate 602 is held at the low level and the signal ongate 604 is clocked to a high level. When the signals on gates 600 and602 are at the low level and the signal on gate 604 is at the highlevel, charge flows out of the charge shift element disposed under gate600 and into the charge shift element under gate 604. The signalsapplied to the gates 606, 608 in bypass horizontal shift register422/502 are then clocked as shown in FIG. 7 to shift the charge packetsthrough the bypass horizontal shift register 422.

The exemplary timing diagram depicted in FIG. 8 is used to direct chargefrom pipeline delay horizontal shift register 412 to extended horizontalshift register 428. In embodiments that omit extended horizontal shiftregister 428, the timing diagram can be used to direct charge frompipeline delay horizontal shift register 412 to charge multiplyinghorizontal shift register 416. And finally, in embodiments that omitpipeline delay horizontal shift register 412, the timing diagram can beused to direct charge from non-destructive sense node 406 to eitherextended horizontal shift register 428 or charge multiplying horizontalshift register 416.

At time T₀₀, gate 600 is clocked to a low level while the signal on gate604 is held at the low level and the signal on gate 602 is clocked to ahigh level. When the signals on gates 600 and 604 are at the low leveland the signal on gate 602 is at the high level, charge flows out of thecharge shift element under gate 600 and into the charge shift elementbelow gate 602. The signals applied to the gates 606, 608 in extendedhorizontal shift register 428 are then clocked as shown in FIG. 8 toshift the charge packets through the extended horizontal shift register.

The charge directing switch illustrated in FIG. 6 can also be used inthe embodiment shown in FIG. 5. Amplifier 424 is connected to the chargeshift element under gate 604. The timing diagrams depicted in FIGS. 7and 8 can be used to direct charge packets to amplifier 424 or chargemultiplying horizontal shift register 416, respectively.

Referring now to FIG. 9, there is shown a flowchart of a method forcontrolling the flow of charge packets in an embodiment in accordancewith the invention. Initially, a charge packet is shifted to thenon-destructive sense node at block 900. The charge packet is convertedto a digital pixel signal representing the amount or number of chargecarriers in the charge packet while the charge packet is sent to thecharge directing switch (block 902). The charge packet is shiftedthrough a pipeline delay horizontal shift register to send the chargepacket to the charge directing switch in an embodiment in accordancewith the invention.

A determination is then made at block 904 as to whether or not thenumber of charge carriers in the charge packet will saturate the chargemultiplying horizontal shift register. If the charge packet willsaturate the charge multiplying horizontal shift register, the processpasses to block 906 where the charge packet is directed to either thebypass horizontal shift register (FIG. 4) or the discharging element(FIG. 5). If the charge carriers will not saturate the chargemultiplying horizontal shift register, the charge packet is directed tothe charge multiplying horizontal shift register and shifted through thecharge multiplying horizontal shift register (block 908).

The method depicted in FIG. 9 repeats for each pixel read out of thepixel array. Only charge packets that do not cause blooming are inputand shifted through the charge multiplying horizontal shift register.Larger charge packets that cause blooming are directed to the bypasshorizontal shift register (FIG. 4) or the discharging element (FIG. 5).In image sensors that include the charge bypass output channel, theoutput amplifier connected to the bypass horizontal shift register(i.e., output amplifier 424) has a noise floor that is higher than thenoise floor of output amplifier connected to the charge multiplyinghorizontal shift register (i.e., output amplifier 418) in an embodimentin accordance with the invention. The higher noise floor is notsignificant because it is less than the photon shot noise containedwithin the large pixel value. By way of example only, the outputamplifier 424 can have a charge to voltage conversion gain as high aspossible to allow the output amplifier 424 to read small signals withless than N2 electrons noise. With N2 electrons noise, any signal of N2²electrons or more (the photon shot noise is the square root of thesignal) would have more than N2 electrons of photon shot noise. Thesignal level that causes a charge packet to be directed to the bypasshorizontal shift register 422 can be two to three times N2² electrons.In this example, the charge multiplying horizontal shift register 416 isnot used and the charge directing switch directs all of the chargepackets with more than 3×N2² electrons to the output amplifier 424.Because the output amplifier 424 may have a large charge conversiongain, the output amplifier 424 can saturate if the signal contains toomuch signal. In that case, the output amplifier 408 is used because theoutput amplifier 408 has a gain that is less than the gain of the outputamplifier 424.

FIG. 10 is a flowchart of a method for producing an image that can beused with the embodiment shown in FIGS. 4 and 5. The value G1 representsthe combined charge to voltage conversion gain of the amplifier 408 andoutput circuit 410. The value G2 represents the combined charge tovoltage conversion gain of the output amplifier 424 and output circuit426. And finally, the value G3 represents the combined charge to voltageconversion gain of the output amplifier 418 and output circuit 420.

Initially, a determination is made at block 1000 as to whether or notthe number of charge carriers in a charge packet will saturate thecharge multiplying horizontal shift register. If not, the charge packetis directed to and shifted through the charge multiplying horizontalshift register and the digital pixel signal produced by the outputamplifier and output circuit connected to the charge multiplyinghorizontal shift register is selected as the digital pixel signal (block1002). The digital pixel signal is then stored, as shown in block 1004.By way of example only, the digital pixel signal can be stored in memory310 shown in FIG. 3.

Next, as shown in block 1006, a determination is made as to whether ornot another charge packet is to be produced by the image sensor. If so,the method returns to block 1000. When the number of charge carriers inthe charge packet will saturate the charge multiplying horizontal shiftregister (block 1000), the process passes to block 1008 where adetermination is made as to whether or not the number of charge carrierswill saturate the output amplifier connected to the bypass horizontalshift register. If not, the charge packet is directed to and shiftedthrough the bypass horizontal shift register and the digital pixelsignal produced by the output amplifier and output circuit connected tothe bypass horizontal shift register is selected as the digital pixelsignal (block 1010). The selected digital pixel signal is thenmultiplied by the gain ratio (G3/G2) at block 1012 and the modifieddigital pixel signal stored at block 1004.

If the number of charge carriers will saturate the output amplifierconnected to the bypass horizontal shift register at block 1006, thedigital pixel signal produced by the amplifier connected to thenon-destructive sense node is selected as the digital pixel signal(block 1014). The selected digital pixel signal is then multiplied bythe gain ratio (G3/G1) at block 1016 and the modified pixel signalstored at block 1004. By way of example only, the gain ratios (G3/G2)and (G3/G1) can be applied to the selected digital pixel signals by acomputing device, such as processor 308 shown in FIG. 3.

When all of the charge packets are produced by the image sensor at block1006, the method passes to block 1018 where the stored pixel signals ormodified pixel signals are combined to produce an image. Embodiments inaccordance with the invention can combine blocks 1004 and 1018 such thatthe pixel signals are stored in a location that corresponds to thelocation of the pixel in the image. Thus, the memory or storage unitstores a completed image when all of the charge packets have beenproduced by the image sensor.

One process for determining the gain ratios G3/G2 and G3/G1 used in themethod shown in FIG. 10 will now be described. The G3/G1 gain ratio canbe determined from the charge packets that are directed to the chargemultiplying horizontal shift register 418 and output circuit 420. Thosecharge packets are processed by both output circuits 410 and 420. In oneembodiment in accordance with the invention, a running average of (thedigital pixel signals produced by output circuit 420)/(the digital pixelsignals produced by output circuit 410) is determined. This runningaverage equals the gain ratio G3/G1. A running average is used in anembodiment because as the camera temperature changes the gain ratioG3/G1 will likely also change.

The G3/G2 gain ratio is determined by first measuring the gain ratioG1/G2 and then calculating G3/G2=G3/G1×G1/G2. The G1/G2 gain ratio canbe determined from the charge packets that are directed to bypasshorizontal shift register 422 and output circuit 426. Those chargepackets are processed by both output circuits 410 and 426. A runningaverage of (the digital pixel signals produced by output circuit410)/(the digital pixel signals produced by output circuit 426) isdetermined.

Embodiments in accordance with the invention are not limited to the useof a running average. A running least squares fit average can be used inanother embodiment in accordance with the invention. Those skilled inthe art will appreciate that the running least squares fit average willalso correct offset errors.

FIG. 11 is an exemplary diagram that is used to illustrate how thesignals output from the three output channels are combined to produce animage in an embodiment in accordance with the invention. Line 1100represents the output of the charge multiplying output channel forcharge packets having zero to S1 number of charge carriers. Line 1102represents the output of the charge bypass output channel for chargepackets having zero to S2 number of charge carriers. And finally, line1104 represents the output of the charge sensing output channel forcharge packets having zero to S3 number of charge carriers. The slope ofeach line 1100, 1102, 1104 is the output gains G3, G2, and G1,respectively.

Line 1106 represents a saturation level for the amplifiers in thedifferent output channels (e.g., amplifiers 408, 418, 426). The pixelintensity for all output channels will not exceed this saturation level.Thus, the maximum pixel intensity for an image is limited to theintensity level represented by line 1106.

Output amplifier 418 saturates at the lowest number of charge carriersS1, output amplifier 424 at the number of charge carriers S2, and outputamplifier 408 at the highest number of charge carriers S3 in theillustrated embodiment. If the number of charge carriers is between S1and S2, the output of the charge bypass output channel is multiplied bythe ratio of the slopes of the output lines 1100, 1102 (i.e., the gainratio). If the number of charge carriers is greater than S2, the outputof the charge sensing output channel is multiplied by the ratio of theslopes of lines 1104 and 1100.

The pixel signals output from some of the output channels are multipliedby a gain ratio to produce an image having a greater range of intensityvalues. The gain ratios, when applied to the charge packets having anumber of charge carriers between S1 and S3, modify the pixel intensityvalues such that the intensity values fall along lines 1108 and 1110.Line 1108 is between S1 and S2 and line 1110 between S2 and S3.

By way of example only, a charge packet is output from the charge bypassoutput channel having a number of charge carriers that corresponds topoint 1112 along line 1102. When the charge packet is multiplied by thegain ratio (G3/G2), the modified pixel intensity value corresponds topoint 1112′ along line 1108. A charge packet output from the chargesensing output channel has a number of charge carriers corresponding topoint 1114 along line 1104. When the charge packet is multiplied by thegain ratio (G3/G1), the modified pixel intensity value corresponds topoint 1114′ along line 1110. Thus, the gain ratios produce modifiedpixel intensities that fall or substantially fall on lines 1108 and1110, thereby producing an image with a greater range of pixel intensityvalues.

Referring now to FIG. 12, there is shown a flowchart of a method forproducing an image sensor in an embodiment in accordance with theinvention. Initially, a pixel array is produced, as shown in block 1200.The pixel array of photodetectors can be produced using techniques knownin the art. For example, masking layers can be deposited over asubstrate and each patterned to provide openings at the locations whererespective components in each pixel (e.g., photodetectors) will beformed. Dopants having particular conductivity types are then implantedinto the substrate to produce the components.

Next, as shown in block 1002, a horizontal CCD shift register isproduced on one side of the pixel array. The horizontal CCD shiftregister can be produced using techniques known in the art. For example,a masking layer can be deposited over the substrate and patterned toprovide openings at the locations where each shift register element, orphase in each shift register element, will be formed. A dopant having aparticular conductivity type is then implanted into the substrate toproduce the shift register element or phase. Barrier implants may alsobe formed between shift register elements or phases. Also, electrodesare produced over each shift register element or phase and electricallyconnected to respective voltage clocking signals that are used to shiftcharge packets through the horizontal CCD shift registers. Typically,the electrodes are formed in electrode layers. In a two phase CCD shiftregister, alternating electrodes (every other electrode) form oneelectrode layer and the remaining electrodes a second electrode layer.In a four phase CCD shift register, electrodes disposed over the firstand third phase (or the second and fourth phase) form one electrodelayer and the remaining electrodes a second electrode layer.

Next, as shown in blocks 1204, 1206, and 1208, the charge sensing outputchannel, the charge bypass output channel, and the charge multiplyingoutput channel are produced. The output channels can be produced usingtechniques known in the art. For example, a masking layer can bedeposited over the substrate and patterned to provide openings at thelocations where each shift register element, or phase in each shiftregister element, will be formed. A dopant having a particularconductivity type is then implanted into the substrate to produce theshift register element or phase. Barrier implants may also be formedbetween shift register elements or phases. Also, electrodes or gates areproduced over each shift register element or phase and electricallyconnected to respective voltage clocking signals that are used to shiftcharge packets through the horizontal shift registers. Typically, thegates are formed in layers. In a two phase shift register, alternatinggates (every other gate) form one layer and the remaining gates a secondelectrode layer. In a four phase shift register, gates disposed over thefirst and third phase (or the second and fourth phase) form one layerand the remaining gates a second electrode layer.

And finally, the charge directing switch is produced at block 1210. Thecharge directing switch can be produced using techniques known in theart. For example, a masking layer can be deposited over the substrateand patterned to provide openings at the locations where each shiftregister element, or phase in each shift register element, will beformed. A dopant having a particular conductivity type is then implantedinto the substrate to produce the shift register element or phase.Barrier implants may also be formed between shift register elements orphases. Also, the gates are produced over each shift register element orphase and electrically connected to respective voltage clocking signalsthat are used to direct the charge packets through a respective outputof the charge directing switch.

Those skilled in the art will recognize that other embodiments inaccordance with the invention can modify the order of the blocks shownin FIG. 10. For example, in embodiments that do not include a chargebypass output channel, the discharging element can be produced usingtechniques known in the art. Multiple components included in the pixelarray, horizontal shift register, charge bypass output channel, chargesensing output channel, or the charge multiplying output channel can beproduced at the same time by patterning the masking layersappropriately. Embodiments that include a pipeline delay horizontalshift register or an extended horizontal shift register can producethese elements when producing the desired output channels. Additionally,other components in an image sensor can be produced in between theprocesses shown in FIG. 12.

The invention has been described in detail with particular reference tocertain embodiments thereof, but it will be understood that variationsand modifications can be effected within the spirit and scope of theinvention. For example, signal levels other than the signal levels shownin FIGS. 7, 8 and 10 can be used. The charge directing switch can beimplemented differently in other embodiments in accordance with theinvention. An image capture device can include additional componentsthan the components shown in FIG. 3.

And even though specific embodiments of the invention have beendescribed herein, it should be noted that the application is not limitedto these embodiments. In particular, any features described with respectto one embodiment may also be used in other embodiments, wherecompatible. And the features of the different embodiments may beexchanged, where compatible.

PARTS LIST

-   100 pixel array-   102 pixel-   105 horizontal CCD shift register-   110 charge multiplying horizontal CCD shift register-   120 output amplifier-   200 output amplifier-   300 image capture device-   302 light-   304 imaging stage-   306 image sensor-   308 processor-   310 memory-   312 display-   314 other input/output (I/O)-   400 image sensor-   402 pixel array-   404 horizontal shift register-   406 non-destructive sense node-   408 amplifier-   410 correlated double sample unit-   412 pipeline delay horizontal shift register-   413 signal line-   414 charge directing switch-   416 charge multiplying horizontal shift register-   418 amplifier-   420 correlated double sample unit-   422 bypass horizontal shift register-   424 amplifier-   426 correlated double sample unit-   428 extended horizontal CCD shift register-   600 gate-   602 gate-   604 gate-   606 gate-   608 gate-   1100 line representing output of the charge multiplying output    channel-   1102 line representing output of the charge bypass output channel-   1104 line representing output of the charge sensing output channel-   1106 line representing a saturation level-   1108 line representing pixel intensity values-   1110 line representing pixel intensity values-   1112 pixel intensity value-   1112′ modified pixel intensity value-   1114 pixel intensity value-   1114′ modified pixel intensity value-   S1 value representing a number of charge carriers-   S2 value representing a number of charge carriers-   S3 value representing a number of charge carriers

1. A method for producing an image captured by an image sensor, whereinthe image sensor includes at least two output channels, a chargemultiplying output channel having an associated gain value of G3 and acharge bypass output channel having an associated gain value G2, and thecharge bypass output channel produces pixel signals for charge packetsthat will saturate the charge multiplying output channel, the methodcomprising: for each charge packet, selecting a pixel signal produced bythe charge multiplying output channel or a pixel signal produced by thecharge bypass output channel; if the pixel signal produced by the chargebypass output channel is selected, applying a gain factor (G3/G2) toeach pixel signal selected from the charge bypass output channel; andcombining the selected pixel signals to produce the image.
 2. A methodfor producing an image captured by an image sensor, wherein the imagesensor includes three output channels, a non-destructive charge sensingoutput channel having an associated gain value of G1 a charge bypassoutput channel having an associated gain value G2, and a chargemultiplying output channel having an associated gain value G3, themethod comprising: for each charge packet, selecting a pixel signalproduced by either the charge sensing output channel, the chargemultiplying output channel or the charge bypass output channel; if thepixel signal produced by the charge sensing output channel is selected,applying a gain factor (G3/G1) to each pixel signal selected from thecharge sensing output channel; and if the pixel signal produced by thecharge bypass output channel is selected, applying a gain factor (G3/G2)to each pixel signal selected from the charge bypass output channel; andcombining the selected pixel signals to produce the image.